DESCRIPTION
Power MOSFET The UTC FEATURES
* RDS(ON) = 3.8Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL RDERING INFORMATION Package TO-220F TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tape Reel Tube Ordering Number Lead Free Halogen Free 3N65KL-TF3-T 3N65KG-TF3-T 3N65KL-TN3-R 3N65KG-TN3-R 3N65KL-TN3-T 3N65KG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-837.A Datasheet pdf - 3N65K ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A 45 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repe...