Unisonic Technologies 4N70-R
4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N70-R |
|---|---|
| Datasheet | 4N70-R Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.8Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 16nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 1 Power MOSFET TO-220F1
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N70L-TF1-T 4N70G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube
● MARKING INFORMATION PACKAGE TO-220F1 Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 6 QW-R502-A66.a 4N70-R Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) IAR ID IDM EAS 4A 4A 16 A 55 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °С °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
