Unisonic Technologies 4N70-S
4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N70-S |
|---|---|
| Datasheet | 4N70-S Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 3.2 Ω @VGS = 10 V, ID=2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 1 TO-252
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N70L-TN3-R 4N70G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-23.a 4N70-S Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 4A 16 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 135 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 49 W TJ +150 °С Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °С °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
