Unisonic Technologies 6N60Z
6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.| Part No. | 6N60Z |
|---|---|
| Datasheet | 6N60Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60ZL-TF3-T 6N60ZG-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S Packing Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-741.C 6N60Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 ±20 V V Avalanche Current (Note 2) Continuous Drain Current IAR 6.2 A ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 252 mJ 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns Power Dissipation Junction Temperature PD 40 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Notes: 1.
