Datasheet Details
| Part number | 7N120-E2 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 273.55 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 7N120-E2 Datasheet
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| Part number | 7N120-E2 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 273.55 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
7N120-E2 Datasheet
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The UTC 7N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N120L-TF1-T 7N120G-TF1-T 7N120L-T47-T 7N120G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-D115.a 7N120-E2 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 1200 ±30 7 14 310 1.79 V V A A mJ V/ns Power Dissipation TO-220F1 TO-247 PD 41 W 172 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
UNISONIC TECHNOLOGIES CO., LTD 7N120-E2 Preliminary 7.0A, 1200V N-CHANNEL POWER MOSFET.
| Part Number | Description |
|---|---|
| 7N100-C | N-CHANNEL MOSFET |
| 7N150-E3 | 1500V N-CHANNEL POWER MOSFET |