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7N120-E2 - N-CHANNEL POWER MOSFET

Description

The UTC 7N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=3.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 7N120-E2 Preliminary 7.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N120L-TF1-T 7N120G-TF1-T 7N120L-T47-T 7N120G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube  MARKING www.unisonic.com.
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