Unisonic Technologies BSS127
BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. The Power Dissipation of the package may result in a lower continuous drain current.| Part No. | BSS127 |
|---|---|
| Datasheet | BSS127 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 600Ω @ VGS= 4.5V, ID=0.016A RDS(ON) ≤ 500Ω @ VGS=10V, ID=0.016A * Ultra Low Gate Charge (Typical 140nC) * Ultra High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BSS127L-AE2-R BSS127G-AE2-R SOT-23-3 BSS127L-AE3-R BSS127G-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123 GSD GSD Packing Tape Reel Tape Reel
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-824.F BSS127 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±20 V Drain Current Continuous TA=25°C TA=70°C ID 0.021 0.017 A A Pulsed (TA=25°C) Peak Diode Recovery dv/dt IDM dv/dt 0.09 A 6 kV/µs Power Dissipation (TA=25°C) Junction Temperature PD TJ 0.3 -55 ~ +150 W °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
