Datasheet4U Logo Datasheet4U.com

BSS127 - N-Channel Enhancement MOSFET

Key Features

  • ƽ N-Channel ƽ Enhancement mode ƽ Logic level ƽ dv/dt rated ƽ VDS (V) = 600V ƽ ID = 0.021 A ƽ RDS(ON) ˘ 500ȍ +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć, unless otherwise specified Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25ć TA=70ć Re.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS127 Small-Signal-Transistor Infineon Technologies
BSS127 N-CHANNEL MOSFET Diodes Incorporated
BSS127 N-CHANNEL MOSFET UTC
BSS123 N-Channel MOSFET JCET
BSS123 N-channel transistor Logic level FET NXP

Other Datasheets by Kexin Semiconductor

Part Number Description
BSS123 N-Channel MOSFET
BSS138 N-Channel MOSFET
BSS138E N-Channel MOSFET
BSS79 NPN Silicon Switching Transistors
BSS79B NPN Silicon Switching Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type TraMnOsiSsFtoErsT N-Channel Enhancement MOSFET BSS127 Ƶ Features ƽ N-Channel ƽ Enhancement mode ƽ Logic level ƽ dv/dt rated ƽ VDS (V) = 600V ƽ ID = 0.021 A ƽ RDS(ON) ˘ 500ȍ +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć, unless otherwise specified Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25ć TA=70ć Reverse diode dv/dt ID=0.09A, VDS=480V, di/dt=200A/ȝs, Power Dissipation Tj,max=150ć Thermal Resistance.