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BSS123 - N-Channel MOSFET

Features

  • ƽ VDS (V) = 100V ƽ ID = 0.17 A (VGS = 10V) ƽ RDS(ON) ˘ 6¡ (VGS = 10V) ƽ RDS(ON) ˘ 10¡ (VGS = 4.5V) ƽ ESD Protected 2KV HBM +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Derate Abo.

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Full PDF Text Transcription

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SMD Type N-Channel MOSFET BSS123 Ƶ Features ƽ VDS (V) = 100V ƽ ID = 0.17 A (VGS = 10V) ƽ RDS(ON) ˘ 6¡ (VGS = 10V) ƽ RDS(ON) ˘ 10¡ (VGS = 4.5V) ƽ ESD Protected 2KV HBM +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Derate Above 25°C Thermal Resistance, Junction-to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RșJA TJ Tstg Rating 100 ±20 0.17 0.68 0.36 2.8 350 150 -55 to 150 Unit V A W mW/ć °C/W ć www.kexin.com.
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