| Part Number | BSS127 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type TraMnOsiSsFtoErsT N-Channel Enhancement MOSFET BSS127 Ƶ Features ƽ N-Channel ƽ Enhancement mode ƽ Logic level ƽ dv/dt rated ƽ VDS (V) = 600V ƽ ID = 0.021 A ƽ RDS(ON) ˘ 500ȍ +0.2 2.8 -0.1 . ƽ N-Channel ƽ Enhancement mode ƽ Logic level ƽ dv/dt rated ƽ VDS (V) = 600V ƽ ID = 0.021 A ƽ RDS(ON) ˘ 500ȍ +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1. |
BSS127 Datasheet and Specifications PDF
The BSS127 is a N-Channel Enhancement MOSFET.
| Part Number | BSS127 Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Manufacturer | Galaxy Microelectronics |
| Overview |
N-Channel Enhancement Mode MOSFET BSS127
Features
Advanced trench technology Low input capacitance High VDSS rating for power application Low input / output leakage RoHS compliant with Halo.
* Advanced trench technology * Low input capacitance * High VDSS rating for power application * Low input / output leakage * RoHS compliant with Halogen-free Mechanical Data * Case: SOT-23 * Molding Compound: UL Flammability Classification Rating 94V-0 * Terminals: Matted-Tin plated; Solderable Per . |
| Part Number | BSS127 Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | Diodes Incorporated |
| Overview |
This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.
Applications
Motor Cont.
* Low Input Capacitance * High BVDSS Rating for Power Application * Low Input/Output Leakage * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q10. |
| Part Number | BSS127 Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.
FEATURES
* RDS(ON) ≤ 600Ω @ VG.
* RDS(ON) ≤ 600Ω @ VGS= 4.5V, ID=0.016A RDS(ON) ≤ 500Ω @ VGS=10V, ID=0.016A
* Ultra Low Gate Charge (Typical 140nC) * Ultra High Switching Speed
* SYMBOL Power MOSFET * ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BSS127L-AE2-R BSS127G-AE2-R SOT-23-3 BSS127L-AE3-R B. |