Unisonic Technologies MJE13003-H
NPN SILICON TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.●
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability●
APPLICATIONS
* Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits● ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-H-x-T60-K MJE13003G-H-x-T60-K MJE13003L-H-x-T6C-A-K MJE13003G-H--x-T6C-A-K MJE13003L-H-x-T6C-K MJE13003G-H-x-T6C-K MJE13003L-H-x-T6S-K MJE13003G-H-x-T6S-K MJE13003L-H-x-T92-B MJE13003G-H-x-T92-B MJE13003L-H-x-T92-K MJE13003G-H-x-T92-K MJE13003L-H-x-T92-R MJE13003G-H-x-T92-R MJE13003L-H-x-T9N-B MJE13003G-H-x-T9N-B MJE13003L-H-x-T9N-K MJE13003G-H-x- T9N-K MJE13003L-H-x- T9N-R MJE13003G-H-x- T9N-R MJE13003L-H-x-TA3-T MJE13003G-...