Unisonic Technologies MJE13003-R
NPN SILICON TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.●
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability●
APPLICATIONS
* Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits● ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-R-x-T92-B MJE13003G-R-x-T92-B MJE13003-L-R-x-T92-K MJE13003G-R-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Package TO-92 TO-92 Pin Assignment 123 BCE BCE Packing Tape Box Bulk
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R221-022.A MJE13003-R NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS Collector-Emitter Voltage VCEO(SUS) 400 Collector-Base Voltage VCBO 7...