Part MJE13003-P
Description NPN SILICON TRANSISTOR
Category Transistor
Manufacturer Unisonic Technologies
Size 383.59 KB
Unisonic Technologies

MJE13003-P Overview

Description

These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

Key Features

  • * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C
  • * 700V blocking capability