Datasheet4U Logo Datasheet4U.com

UT3P01Z - P-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages.

This device can be applied to general-purpose switching devices applications.

Features

  • S.
  • RDS(ON) ≤ 10.4 Ω @ VGS=-4.0V, ID=-50mA.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source.

📥 Download Datasheet

Datasheet preview – UT3P01Z

Datasheet Details

Part number UT3P01Z
Manufacturer UTC
File Size 187.28 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet UT3P01Z Datasheet
Additional preview pages of the UT3P01Z datasheet.

📁 Similar Datasheet

  • UT3P06 - P-CHANNEL POWER MOSFET (Unisonic Technologies)
  • UT3PP - DUAL TRANSISTOR (Unisonic Technologies)
  • UT3005 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3005 - Standard Recovery Rectifiers (Microsemi)
  • UT3006 - N-Channel Power MOSFET (Unisonic Technologies)
  • UT3010 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3010 - Standard Recovery Rectifiers (Microsemi)
  • UT3020 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
  • UT3020 - Standard Recovery Rectifiers (Microsemi)
  • UT3040 - STANDARD RECOVERY RECTIFIERS (Digitron Semiconductors)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UT3P01Z P-CHANNEL POWER MOSFET  DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications.  FEATURES * RDS(ON) ≤ 10.4 Ω @ VGS=-4.0V, ID=-50mA * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 3.Drain Power MOSFET 1.Gate 2.
Published: |