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UT3P01Z - P-CHANNEL POWER MOSFET

General Description

The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages.

This device can be applied to general-purpose switching devices applications.

Key Features

  • S.
  • RDS(ON) ≤ 10.4 Ω @ VGS=-4.0V, ID=-50mA.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT3P01Z P-CHANNEL POWER MOSFET  DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications.  FEATURES * RDS(ON) ≤ 10.4 Ω @ VGS=-4.0V, ID=-50mA * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 3.Drain Power MOSFET 1.Gate 2.