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UT3PP06 - Dual P-CHANNEL POWER MOSFET

General Description

The UTC UT3PP06 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Key Features

  • RDS(ON) ≤ 160 mΩ @ VGS=-10V, ID=-1.5A RDS(ON) ≤ 200 mΩ @ VGS=-4.5V, ID=-1.5A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL (7)(8) D2 (5)(6) D1 Power MOSFET SOP-8 (2) (4) G2 G1 S2 (1) P-Channel S1 (3) P-Channel.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT3PP06 Preliminary -3A, -60V DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT3PP06 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.  FEATURES * RDS(ON) ≤ 160 mΩ @ VGS=-10V, ID=-1.5A RDS(ON) ≤ 200 mΩ @ VGS=-4.5V, ID=-1.