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UT70N03 - N-Channel Power MOSFET

Datasheet Summary

Description

The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=33A.
  • RDS(ON) ≤ 9.5 mΩ @ VGS=4.5V, ID=20A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Datasheet preview – UT70N03

Datasheet Details

Part number UT70N03
Manufacturer UTC
File Size 298.44 KB
Description N-Channel Power MOSFET
Datasheet download datasheet UT70N03 Datasheet
Additional preview pages of the UT70N03 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT70N03 N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 7.2 mΩ @ VGS=10V, ID=33A * RDS(ON) ≤ 9.5 mΩ @ VGS=4.
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