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UT70P02 - Power MOSFET

General Description

The UT70P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) = 6mΩ @VGS = -10 V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain.
  • Pb-free plating product number: UT70P02L 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT70P02 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFET „ DESCRIPTION The UT70P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 6mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain *Pb-free plating product number: UT70P02L 1.Gate 3.Source „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT70P02-TN3-R UT70P02L-TN3-R UT70P02-TN3-T UT70P02L-TN3-T Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tape Reel Tube www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co.