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UT70P03 - P-CHANNEL Power MOSFET

General Description

The UT70P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 7.0 mΩ @ VGS=-10V, ID=-35A RDS(ON) ≤ 11 mΩ @ VGS=-4.5V, ID=-35A.
  • Low Capacitance.
  • Low Gate Charge.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2022 Unisonic Technologies Co. , Ltd 1 of 5 QW-R502-210.M UT70P03 Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT70P03 -70A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 7.0 mΩ @ VGS=-10V, ID=-35A RDS(ON) ≤ 11 mΩ @ VGS=-4.5V, ID=-35A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-210.