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UTC9013 - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • High total power dissipation. (625mW).
  • High collector current. (500mA).
  • Excellent hFE linearity.
  • Complementary to UTC 9012 1 TO-92 1:.

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UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (500mA) *Excellent hFE linearity.