Unisonic Technologies UTC9013
NPN EPITAXIAL SILICON TRANSISTOR
| Part No. | UTC9013 |
|---|---|
| Datasheet | UTC9013 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
*High total power dissipation. (625mW) *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER 2: BASE 3: COLLECTORABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 5 Collector current Ic 500 Collector dissipation Pc 625 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 UNIT V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=100µA, IE=0 40 Collector-emitter breakdown voltage BVCEO Ic=1mA, IB=0 20 Emitter-base breakdown voltage BVEBO IE=100µA, Ic=0 5 Collector cutoff current ICBO VCB=25V, IE=0 Emitter cutoff current IEBO VEB=3V, IC=0 DC current gain hFE1 VCE=1V,Ic=50mA 64 hFE2 VCE=1V,Ic=500mA 40 Collector-emitter saturation voltage VCE(sat) Ic=500mA, IB=50mA Base-emitter saturat...