Unisonic Technologies UTC9015
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | UTC9015 |
|---|---|
| Datasheet | UTC9015 Download |
| Manufacturer |  Unisonic Technologies |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
*High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTERABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -45 Emitter-base voltage VEBO -5 Collector current Ic -100 Collector dissipation Pc 450 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 2: BASE 3: COLLECTOR UNIT V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=-100µA, IE=0 -50 Collector-emitter breakdown voltage BVCEO Ic=-1mA, IB=0 -45 Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 Collector cutoff current ICBO VCB=-50V, IE=0 Emitter cutoff current IEBO VEB=-5V, IC=0 DC current gain hFE VCE=-5V, Ic=-1mA 60 Collector-emitter saturation voltage VCE(sat) Ic=-100mA, IB=-5mA Base-emitter saturation voltage VBE(sat) Ic=-100mA, IB=-5mA Bas...
