Unisonic Technologies UTC9018
NPN Transistor
FEATURES
*High Current Gain Bandwidth Product fT=1.1GHz (Typ) 1 TO-92 1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise noted) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO IC Pc TSTG Tj VALUE 30 15 5 50 400 -55 ~ +150 150 UNIT V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO VCE(SAT) hFE fT Cob TEST CONDITIONS IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, Ic=0 VCB=12V, IE=0 IC=10mA, IB=1mA VCE=5V, IC=1mA VCE=5V, IC=5mA VCB=10V, IE=0, f=1MHz MIN 30 15 5 TYP MAX UNIT V V V 50 0.5 28 700 100 1100 1.3 1.7 198 nA V MHz pF CLASSIFICATION of hFE RANK RANGE D 28-45 E 39-60 F 54-80 G 72-108 H 97-146 I 132-198 UTC UNISONIC TECHNOLOGIES CO.