Unisonic Technologies UTC9012
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | UTC9012 |
|---|---|
| Datasheet | UTC9012 Download |
| Manufacturer |  Unisonic Technologies |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
*High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING Collector-base voltage VCBO -40 Collector-emitter voltage VCEO -20 Emitter-base voltage VEBO -5 Collector current Ic -500 Collector dissipation Pc 625 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 UNIT V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -40 Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 Collector cutoff current ICBO VCB=-25V,IE=0 Emitter cutoff current IEBO VEB=-3V,IC=0 DC current gain hFE1 VCE=-1V,Ic=-50mA 64 hFE2 VCE=-1V,Ic=-500mA 40 Collector-emitter saturation voltage VCE(sat) Ic=-500mA,IB=-50mA Base-emitter...