DESCRIPTION
Power MOSFET The UTC FEATURES
* RDS(ON)= 7mΩ @ VGS=10V, ID= 50A RDS(ON)= 10mΩ @ VGS=4.5V, ID=50A * High switching speed * Improved dv/dt capability ORDERING INFORMATION Package TO-220 Ordering Number Lead Free Halogen Free UTT100N05L-TA3-T UTT100N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source 1 G Pin Assignment 2 3 D S Packing Tube Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-688.a Datasheet pdf - UTT100N05 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 50 V VGSS ±20 V 100 A Continuous ID Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL...