Unisonic Technologies UTT100N06
UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.| Part No. | UTT100N06 |
|---|---|
| Datasheet | UTT100N06 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* Fast switching speed * RDS(ON) < 7.0mΩ @ VGS=10V, ID=50A * 100% avalanche tested * Improved dv/dt capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100N06L-TA3-T UTT100N06G-TA3-T UTT100N06L-TF2-T UTT100N06G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F2 Pin Assignment 123 GD S GD S Packing Tube Tube Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-509.E UTT100N06 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 60 V ±20 V Drain Current Continuous Pulsed ID IDM 100 A 400 A Avalanche Energy Peak Diode Recovery dv/dt Single Pulsed EAS dv/dt 450 mJ 6 V/ns Power Dissipation TO-220 TO-220F2 PD 100 W 63 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
