UTT100N08 Datasheet PDF | Unisonic Technologies

Unisonic Technologies UTT100N08

UTT100N08 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.

Part No.	UTT100N08
Datasheet	UTT100N08 Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

Power MOSFET The UTC

FEATURES

* Fast switching speed * RDS(ON)= 7mΩ @ VGS=10V * Work below 175°C * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free UTT100N08L-TA3-T UTT100N08G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source UTT100N08L-TA3-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube (2) TA3: TO-220 (3) G: Halogen Free, L: Lead Free Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-727.a Datasheet pdf - UTT100N08 Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Continuous ID 100 A Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.