UTCPCR406 Datasheet | Unisonic Technologies

DESCRIPTION The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. .. TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS PARAMETERS Repetitive Peak Off-State Voltage PCR406-6 PCR406-5 On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature SYMBOL VDRM TEST CONDITION Tj=40 to 125°C (RGK =1kΩ) Tc=40°C Half Cycle=180, Tc=40°C IGR=10u A 10us Max. 20ms Max. RATING 400 300 0.8 0.5 1 0.1 150 -40~125 -40~125 250 UNITS V A A V A m W °C °C °C IT(RMS) IT(AV) VGRM IGM PG(AV) Tj TSTG TSLD 1.6mm from case 10s Max. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Off state leakage current Off state leakage current On state voltage On state threshold voltage On state slops resistance Gate trigger current Gate trigger voltage Holding current Latching current Critical rate of voltage rise SYMBOL IDRM IDRM TEST CONDITIONS VDRM(RGK=1KΩ), Tj=125°C VDRM(RGK=1KΩ), Tj=25°C IT=0.4A IT=0.8A Tj=125°C Tj=125°C VD=7V VD=7V RGK=1KΩ RGK=1KΩ VD=0.67- VDRM(RGK=1KΩ), Tj=125°C 0.1 1.0 1. 4 2.2 0.95 600 200 0.8 5 6 UNIT m A µA V V m µA V m A m A V/µs VT VT(TO) Rt IGT VGT IH IL DV/DT UNISONIC TECHNOLOGIES CO. LTD QW-R301-010,A UTC PCR406 PARAMETER Critical rate of current rise Gate controlled delay time mutated turn-off time SYMBOL DV/DT TGD TG TEST CONDITIONS IG=10m A, d IG/dt=0.1A/µs, Tj=125°C IG=10m A, d IG/dt=0.1A/µs, Tj=85°C, VD=0.67- VDRM, VR=35V,...