UTCPN2907A Datasheet | Unisonic Technologies

Features This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 m A. .. TO-92 1:EMITTER 2:BASE 3:COLLECTOR MAXIMUM RATINGS- (Ta=25°C unless otherwise noted) PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Operating and Storage Junction Temperature Range Note: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. SYMBOL VCEO VCBO VEBO IC Tj, Tstg VALUE 60 60 5.0 800 -55 to +150 UNITS V V V m A °C ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage- Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain h FE Ic=0.1m A, VCE=10V Ic=1.0 m A,VCE=10V Ic=10 m A,VCE=10V Ic=150 m A,VCE=10V 75 100 100 100 V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO IC=10m A,IB=0 IC=10μA,IE=0 IE=10μA ,IC=0 VCB=30V,VEB=0.5V VCE=30V,VBE=0.5V VCB=50V,IE=0 VCB=50V,IE=0,TA=150°C 60 60 5.0 50 50 0.02 20 V V V n A n A μA μA SYMBOL TEST CONDITIONS UNITS UNISONIC TECHNOLOGIES CO. LTD QW-R201-041,A UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR Ic=500 m A,VCE=10V 50 0.4 1.6 1.3 2.6 200 8.0 30 VCE(sat) VBE(sat) Ic=150 m A,IB=15m A Ic=500 m A, IB=50m A Ic=150 m A,IB=15m A- Ic=500 m A, IB=50m A IC=50Ma.VCE=20V, F=100MHz VCB=10V,IE=0, f=100k Hz VEB=2.0V,IC=0, f=100k Hz VCC=30V,IC=150m A IB1=15m A VCC=6.0V,IC=150m A IB1=IB2=15m A Collector-Emitter Saturation Voltage- Base-Emitter Saturation Voltage SMALL SIGNAL CHARACRERISTICS Current Gain-Bandwidth Product MHz p F p F f T Cobo Cibo .. Output Capacitance Input Capacitance SWITCHING CHARACRERISTICS Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time Thermal CHARACTERISTICS Total Device Dissipation Derate above 25°C Thermal resistance, junction to Case Thermal resistance,...