UTCPN2222A Datasheet | Unisonic Technologies

Features .. - This device is for use as a medium power amplifier and switch requiring collector currents up to 500m A. Sourced from Process 19. TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current Ic 1 A Collector dissipation Pc 625 m W °C Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current Base cutoff current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO IEBO IBL TEST CONDITIONS Ic=10µA, IE=0 Ic=10m A, IB=0 IE=10µA, Ic=0 VCE=60V,VEB(OFF)=3.0V VCB=60V,IE=0 VCB=60V,IE=0, TA=150°C VEB=3.0V,IC=0 VCE=60V, VEB(OFF)=3.0V 75 40 6 UNIT V V V n A µA µA n A n A 10 0.01 10 10 20 UNISONIC TECHNOLOGIES CO., LTD. QW-R201-033,A UTC PN2222A PARAMETER ON CHARACTERISTICS DC current gain NPN EPITAXIAL SILICON TRANSISTOR SYMBOL h FE TEST CONDITIONS Ic=0.1m A, VCE=10V Ic=1.0m A, VCE=10V Ic=10m A, VCE=10V Ic=10m A, VCE=10V, TA=-55°C Ic=150m A, VCE=10V- Ic=150m A, VCE=1.0V- Ic=500m A, VCE=10V- Ic=150m A, IB=15m A Ic=500m A, IB=50m A Ic=150m A, IB=15m A Ic=500m A, IB=50m A Ic=20m A, VCE=20V, f=100MHz VCB=10V, IE=0, f=100k Hz VEB=0.5V, IC=0, f=100k Hz IC=20m A, VCB=20V, f=31.8MHz IC=100µA, VCE=10V, Rs=1.0kΩ, f=1.0k Hz IC=20m A, VCB=20V, f=300MHz 35 50 75 35 100 50 40 UNIT .. Collector-emitter saturation voltage- Base-emitter saturation voltage- SMALL SIGNAL CHARACTERISTICS Current gain-Bandwidth product Output capacitance Input capacitance Collector base time constant...