Click to expand full text
UTC PN2222A
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
FEATURES
www.DataSheet4U.com
*This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19.
1
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current Ic 1 A Collector dissipation Pc 625 mW °C Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
UTCPN2222A Datasheet
