Datasheet4U Logo Datasheet4U.com

CHA2080-98F - 71-86GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA2080-98F is a Low Noise Amplifier with variable gain.

This circuit integrates four stages and provides 3.5dB Noise Figure associated to 22dB Gain and +10dBm Output Power at 1dB compression.

Features

  • Broadband performances: 71-86GHz.
  • Very low Noise Figure: 3.5dB.
  • High Gain: 22dB.
  • Dynamic Gain control: 12dB.
  • 10dBm Pout@1dB compression.
  • BCB Layer protection.
  • DC bias: Vd=3.5Volt@Id=75mA.
  • Chip size 3.35x1.12x0.07mm Associated Gain & NF (dB) 28 24 20 16 12 8 4 0 65 70 75 80 85 90 Frequency (GHz) Typical Linear gain and Noise Figure Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF.

📥 Download Datasheet

Datasheet preview – CHA2080-98F

Datasheet Details

Part number CHA2080-98F
Manufacturer United Monolithic Semiconductors
File Size 517.76 KB
Description 71-86GHz Low Noise Amplifier
Datasheet download datasheet CHA2080-98F Datasheet
Additional preview pages of the CHA2080-98F datasheet.

📁 Similar Datasheet

  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
  • CHA441 - Hall-effect sensor (Cosemitech)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA2080-98F 71-86GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2080-98F is a Low Noise Amplifier with variable gain. This circuit integrates four stages and provides 3.5dB Noise Figure associated to 22dB Gain and +10dBm Output Power at 1dB compression. This amplifier is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges, and electron beam gate lithography and is available in chip form with BCB Layer protection. Functional diagram Main Features ■ Broadband performances: 71-86GHz ■ Very low Noise Figure: 3.
Published: |