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CHA2066 - 10-16GHz Low Noise Amplifier

General Description

The CHA2066 is a two-stage wide band monolithic low noise amplifier.

The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

Key Features

  • Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 5 Noise Figure ( dB ).
  • Broad band performance 10-16GHz.
  • 2.0dB noise figure, 10-16GHz.
  • 16dB gain, ± 0.5dB gain flatness.
  • Low DC power consumption, 50mA.
  • 20dBm 3rd order intercept point.
  • Chip size : 1,52 x 1,08 x 0.1mm 4 3 2 1 0 On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure, 10-16GHz Gain Gain flatness 14 M.

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Datasheet Details

Part number CHA2066
Manufacturer United Monolithic Semiconductors
File Size 128.01 KB
Description 10-16GHz Low Noise Amplifier
Datasheet download datasheet CHA2066 Datasheet

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CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. A B C D E NC G1 7272 NC G2 Vd RFin RFout UMS Main Features Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 5 Noise Figure ( dB ) ■ Broad band performance 10-16GHz ■ 2.0dB noise figure, 10-16GHz ■ 16dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size : 1,52 x 1,08 x 0.1mm 4 3 2 1 0 On wafer typical measurements.