CHA2069 - 18-31GHz Low Noise Amplifier

Product Overview

United Monolithic Semiconductors

Datasheet Details

Part number	CHA2069
Manufacturer	United Monolithic Semiconductors
File Size	132.41 KB
Description	18-31GHz Low Noise Amplifier
Datasheet	CHA2069 Datasheet
Additional preview pages of the CHA2069 datasheet.

Product details

Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

Features

¦ Broad band performance 18-31GHz ¦ 2.5dB noise figure ¦ 22dB gain, ± 1dB gain flatness ¦ Low DC power consumption, 55mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 2,170 x 1,270x 0.1mm 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter NF Noise figure,18-31GHz G Gain ∆G Gain flatness Min Typ Max Unit 2.5 3.5 dB 18 22 dB ± 1 ± 1.5 dB ESD Protections : Electrostatic.

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Other Datasheets by United Monolithic Semiconductors

CHA2069-99F - 18-31GHz Low Noise Amplifier
CHA2069-FAA - 16-32GHz Low Noise Amplifier
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Published: Mar 23, 2005 |