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CHA2069-QDG Datasheet 18-30ghz Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2069-QDG 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless.

General Description

The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier.

Typical applications range from telemunication (point to point, point to multi-point, VSAT) to ISM and military markets.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performance 18-31GHz.
  • 3dB noise figure.
  • 20dB gain.
  • 65mA low DC power consumption.
  • 20dBm 3rd order intercept point (high current configuration).
  • 24L-QFN4x4 SMD package.
  • MSL Level: 1 Gain & NF (dB) UMS A2069 YYWW Gain and NF @ high current configuration Gain and NF(B@CloFw cgurroreunnt cdoenfdig). (BDE grounded) 26 24 22 20 18 S21 16 14 12 10 8 6 NF 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) Main Characteristics.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA2069-99F 18-31GHz Low Noise Amplifier
CHA2069-FAA 16-32GHz Low Noise Amplifier
CHA2069-FAB Low Noise Amplifier
CHA2069 18-31GHz Low Noise Amplifier
CHA2069RAF 18-31GHz Low Noise Amplifier
CHA2063A 7-13GHz Low Noise Amplifier
CHA2066 10-16GHz Low Noise Amplifier
CHA2066-99F Low Noise Amplifier
CHA2066-QAG Low Noise Amplifier
CHA2050-QDG Low Noise Amplifier

CHA2069-QDG Distributor