Datasheet4U Logo Datasheet4U.com

CHA2069-QDG - 18-30GHz Low Noise Amplifier

General Description

The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier.

Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets.

Key Features

  • Broadband performance 18-31GHz.
  • 3dB noise figure.
  • 20dB gain.
  • 65mA low DC power consumption.
  • 20dBm 3rd order intercept point (high current configuration).
  • 24L-QFN4x4 SMD package.
  • MSL Level: 1 Gain & NF (dB) UMS A2069 YYWW Gain and NF @ high current configuration Gain and NF(B@CloFw cgurroreunnt cdoenfdig). (BDE grounded) 26 24 22 20 18 S21 16 14 12 10 8 6 NF 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) Main Characteristics.

📥 Download Datasheet

Datasheet Details

Part number CHA2069-QDG
Manufacturer United Monolithic Semiconductors
File Size 437.74 KB
Description 18-30GHz Low Noise Amplifier
Datasheet download datasheet CHA2069-QDG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA2069-QDG 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package.