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CHA2069-FAA - 16-32GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broadband performance 16-32GHz.
  • 2.5dB typical Noise Figure.
  • 20dBm 3rd order intercept point.
  • 22dB gain.
  • Low DC power consumption.
  • 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 5 0 10 +25 C -40 C +85 C 15 20 25 30 Frequency (GHz) 35 40 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protections: Electrosta.

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Datasheet Details

Part number CHA2069-FAA
Manufacturer United Monolithic Semiconductors
File Size 327.30 KB
Description 16-32GHz Low Noise Amplifier
Datasheet download datasheet CHA2069-FAA Datasheet
Additional preview pages of the CHA2069-FAA datasheet.

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Full PDF Text Transcription

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CHA2069-FAA 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4.5V/55mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A2069 YYWW Main Features ■ Broadband performance 16-32GHz ■ 2.
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