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CHA2069-FAA Datasheet 16-32ghz Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2069-FAA 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD.

General Description

The CHA2069-FAA is a three-stage self-biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package.

Key Features

  • Broadband performance 16-32GHz.
  • 2.5dB typical Noise Figure.
  • 20dBm 3rd order intercept point.
  • 22dB gain.
  • Low DC power consumption.
  • 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 5 0 10 +25 C -40 C +85 C 15 20 25 30 Frequency (GHz) 35 40 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protections: Electrosta.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA2069-FAB Low Noise Amplifier
CHA2069-99F 18-31GHz Low Noise Amplifier
CHA2069-QDG 18-30GHz Low Noise Amplifier
CHA2069 18-31GHz Low Noise Amplifier
CHA2069RAF 18-31GHz Low Noise Amplifier
CHA2063A 7-13GHz Low Noise Amplifier
CHA2066 10-16GHz Low Noise Amplifier
CHA2066-99F Low Noise Amplifier
CHA2066-QAG Low Noise Amplifier
CHA2050-QDG Low Noise Amplifier

CHA2069-FAA Distributor