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CHA2069RAF - 18-31GHz Low Noise Amplifier

General Description

The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier.

The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broad band performance: 18-31GHz.
  • Gain = 21dB (typical).
  • Noise Figure 3.0 dB (typical for f.

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Datasheet Details

Part number CHA2069RAF
Manufacturer United Monolithic Semiconductors
File Size 168.80 KB
Description 18-31GHz Low Noise Amplifier
Datasheet download datasheet CHA2069RAF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a new SMD leadless chip carrier. SMD Package Dimensions Main Features ■ Broad band performance: 18-31GHz ■ Gain = 21dB (typical) ■ Noise Figure 3.0 dB (typical for f<26GHz) ■ Return loss < -6dB ■ SMD leadless package ■ Dimensions: 5.08 x 5.08 x 0.