CHA2069-FAB Description
The CHA2069-FAB is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA2069-FAB Key Features
- Broadband performance 16-32GHz
- 2.5dB typical Noise Figure
- 20dBm 3rd order intercept point
- 22dB gain
- Low DC power consumption
- 6x6mm² metal ceramic hermetic package
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE