CHA2069-FAB Overview
Description
The CHA2069-FAB is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Key Features
- Broadband performance 16-32GHz
- 2.5dB typical Noise Figure
- 20dBm 3rd order intercept point
- Low DC power consumption
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