Datasheet4U Logo Datasheet4U.com

CHA2069-FAB - Low Noise Amplifier

Datasheet Summary

Description

The CHA2069-FAB is a three-stage self-biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broadband performance 16-32GHz.
  • 2.5dB typical Noise Figure.
  • 20dBm 3rd order intercept point.
  • 22dB gain.
  • Low DC power consumption.
  • 6x6mm² metal ceramic hermetic package Linear Gain 30 25 20 15 10 +25 C -40 C +85 C 5 0 10 15 20 25 30 35 40 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 16 32 GHz NF Noise figure 2.5 dB G Small signal Gain 22 dB ESD Protec.

📥 Download Datasheet

Datasheet preview – CHA2069-FAB

Datasheet Details

Part number CHA2069-FAB
Manufacturer United Monolithic Semiconductors
File Size 842.26 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2069-FAB Datasheet
Additional preview pages of the CHA2069-FAB datasheet.

📁 Similar Datasheet

  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
  • CHA441 - Hall-effect sensor (Cosemitech)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA2069-FAB 16-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA2069-FAB is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4.5V/55mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. UMS A2069 YYWW ## SSS Main Features ■ Broadband performance 16-32GHz ■ 2.
Published: |