CHA2069-99F Overview
The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA2069-99F Key Features
- Broad band performance 16-31GHz
- 2.5dB noise figure
- 22dB gain, 1dB gain flatness
- Low DC power consumption, 55mA
- 20dBm 3rd order intercept point
- Chip size : 2,170 x 1,270x 0.1mm
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE