CHA2069-99F Datasheet 18-31ghz Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2069-99F 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA2069-99F
Manufacturer	United Monolithic Semiconductors
File Size	280.84 KB
Description	18-31GHz Low Noise Amplifier
Datasheet	CHA2069-99F-UnitedMonolithicSemiconductors.pdf

General Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

Key Features

Broad band performance 16-31GHz.
2.5dB noise figure.
22dB gain,  1dB gain flatness.
Low DC power consumption, 55mA.
20dBm 3rd order intercept point.
Chip size : 2,170 x 1,270x 0.1mm Gain & NF ( dB ) 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements. Main Electrical Characteristics Tamb. = +25°C Symbol Parameter NF Noise figure,18-31GHz G Gain G Gain flatness Min Typ Max Unit 2.5 3.5 dB.

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