Datasheet Details
| Part number | CHA2069-99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 280.84 KB |
| Description | 18-31GHz Low Noise Amplifier |
| Datasheet |
 CHA2069-99F Datasheet
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General Description
The circuit is a three-stage self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Key Features
- Broad band performance 16-31GHz.
- 2.5dB noise figure.
- 22dB gain, 1dB gain flatness.
- Low DC power consumption, 55mA.
- 20dBm 3rd order intercept point.
- Chip size : 2,170 x 1,270x 0.1mm Gain & NF ( dB ) 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements. Main Electrical Characteristics Tamb. = +25°C Symbol Parameter NF Noise figure,18-31GHz G Gain G Gain flatness Min Typ Max Unit 2.5 3.5 dB.