Datasheet4U Logo Datasheet4U.com

CHA2291 - 10-18GHz Low Noise / Variable Gain Amplifier

General Description

The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded.

This helps to simplify the assembly process.

Key Features

  • Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) NF (dB) 11 12 13 14 15 16 17 Frequency (GHz) Typical on wafer measurements : Gain & NF 18 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain NF No.

📥 Download Datasheet

Datasheet Details

Part number CHA2291
Manufacturer United Monolithic Semiconductors
File Size 408.81 KB
Description 10-18GHz Low Noise / Variable Gain Amplifier
Datasheet download datasheet CHA2291 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SM (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA2292 17-24GHz Low Noise / Variable Gain Amplifier
CHA2293 24.5-29.5GHz Low Noise / Variable Gain Amplifier
CHA2293-99F Variable Gain Amplifier
CHA2294 35-40GHz Low Noise/ Variable Gain Amplifier
CHA2295 6 - 11GHz Buffer Splitter Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA2291 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.