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CHA2291 - 10-18GHz Low Noise / Variable Gain Amplifier

Datasheet Summary

Description

The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded.

This helps to simplify the assembly process.

Features

  • Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) NF (dB) 11 12 13 14 15 16 17 Frequency (GHz) Typical on wafer measurements : Gain & NF 18 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain NF No.

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Datasheet Details

Part number CHA2291
Manufacturer United Monolithic Semiconductors
File Size 408.81 KB
Description 10-18GHz Low Noise / Variable Gain Amplifier
Datasheet download datasheet CHA2291 Datasheet
Additional preview pages of the CHA2291 datasheet.

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Full PDF Text Transcription

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CHA2291 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.
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