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CHA2293 - 24.5-29.5GHz Low Noise / Variable Gain Amplifier

General Description

The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded.

This helps simplify the assembly process.

Key Features

  • Frequency range : 24-30GHz 3dB Noise Figure. 24dB gain Gain control range: 15dB Low DC power consumption, 160mA @ 5V Chip size : 2.32 X 1.23 X 0.10 mm Typical on wafer measurements :Gain & NF 28 26 24 Gain (dB) 22 20 18 16 14 12 10 8 6 4 NF (dB) 2 0 24 25 26 27 28 29 30 Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit Fop G NF Gctrl Id Operating frequency range Small signal.

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Datasheet Details

Part number CHA2293
Manufacturer United Monolithic Semiconductors
File Size 180.37 KB
Description 24.5-29.5GHz Low Noise / Variable Gain Amplifier
Datasheet download datasheet CHA2293 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2293 RoHS COMPLIANT 24-30GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features Frequency range : 24-30GHz 3dB Noise Figure. 24dB gain Gain control range: 15dB Low DC power consumption, 160mA @ 5V Chip size : 2.32 X 1.23 X 0.