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CHA2391 - 36-40GHz Very Low Noise Amplifier

Datasheet Summary

Description

The CHA2391 is a two-stage wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

Features

  • Broad band performance 36-40GHz.
  • 2.5dB noise figure, 36-40GHz.
  • 15dB gain, ± 0.5dB gain flatness.
  • Low DC power consumption, 50mA.
  • 20dBm 3rd order intercept point.
  • Chip size: 1.67 x 1.03 x 0.1mm Main Characteristics Tamb = +25°C 20 5 16 4 12 3 82 41 00 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) On wafer typical measurements . Symbol Parameter Min Typ Max Unit Fop Operating frequency range 36 40 GHz NF Noise figure, 36-40GHz 2.5 3 dB G Gain 12 15 dB.

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Datasheet Details

Part number CHA2391
Manufacturer United Monolithic Semiconductors
File Size 116.88 KB
Description 36-40GHz Very Low Noise Amplifier
Datasheet download datasheet CHA2391 Datasheet
Additional preview pages of the CHA2391 datasheet.

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Full PDF Text Transcription

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CHA2391 RoHS COMPLIANT 36-40GHz Very Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2391 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN Vd 50 25 OUT Vg 1 Vg 2 Gain (dB) NF (dB) Main Features ■ Broad band performance 36-40GHz ■ 2.5dB noise figure, 36-40GHz ■ 15dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size: 1.67 x 1.03 x 0.1mm Main Characteristics Tamb = +25°C 20 5 16 4 12 3 82 41 00 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) On wafer typical measurements .
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