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CHA2395 - 36-40GHz Low Noise Very High Gain Amplifier

General Description

The CHA2395 is a four-stage monolithic low noise amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  • Broadband performances.
  • 3.0dB Noise Figure.
  • 30dB gain.
  • ±1.0dB gain flatness.
  • Low DC power consumption, 90mA@3.5V.
  • Chip size: 2.07 X 1.11 X 0.10 mm Main Characteristics Tamb. = 25°C Typical on wafer measurements 35 6 30 5 25 4 20 3 15 2 10 1 50 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Symbol Parameter Fop Operating frequency range G Small signal gain P1dB Output power at 1dB gain compression NF Noise figure Min Typ Max Unit 36 40 GHz 25 30.

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Datasheet Details

Part number CHA2395
Manufacturer United Monolithic Semiconductors
File Size 98.23 KB
Description 36-40GHz Low Noise Very High Gain Amplifier
Datasheet download datasheet CHA2395 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. In Vd Vd Out Vg 1,2 Vg 3,4 Gain (dB) NF (dB) Main Features ■ Broadband performances ■ 3.0dB Noise Figure ■ 30dB gain ■ ±1.0dB gain flatness ■ Low DC power consumption, 90mA@3.5V ■ Chip size: 2.07 X 1.11 X 0.10 mm Main Characteristics Tamb.