Datasheet4U Logo Datasheet4U.com

CHA3023 - 1-18 GHz WIDE BAND AMPLIFIER

General Description

The CHA3023 is a travelling wave amplifier using cascode FET.

It is designed for a wide range of applications.

The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form.

Key Features

  • Broadband performances : 1-18 GHz.
  • 14dB gain.
  • 3dB typical Low Noise Figure.
  • ±0.7 dB gain flatness.
  • Die size : 2.15 X 1.42 X 0.10 mm On wafer measurements Main Characteristics Tamb. = 25° C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Noise figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications.

📥 Download Datasheet

Datasheet Details

Part number CHA3023
Manufacturer United Monolithic Semiconductors
File Size 424.42 KB
Description 1-18 GHz WIDE BAND AMPLIFIER
Datasheet download datasheet CHA3023 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA3080-98F 71 ~ 76 GHz Medium Power Amplifier UMS
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA3023-99F WIDE BAND AMPLIFIER
CHA3024-99F 2-22GHz Low Noise Amplifier
CHA3024-FDB Low Noise Amplifier
CHA3024-QGG 2-22GHz Low Noise Amplifier
CHA3063 5.5-23GHz Driver Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC www.DataSheet4U.com Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. 15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21 Main Features ■ Broadband performances : 1-18 GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■ ±0.7 dB gain flatness ■ Die size : 2.15 X 1.42 X 0.10 mm On wafer measurements Main Characteristics Tamb.