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CHA3023 Datasheet 1-18 Ghz Wide Band Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3023 RoHS PLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC ..

General Description

The CHA3023 is a travelling wave amplifier using cascode FET.

It is designed for a wide range of applications.

The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form.

Key Features

  • Broadband performances : 1-18 GHz.
  • 14dB gain.
  • 3dB typical Low Noise Figure.
  • ±0.7 dB gain flatness.
  • Die size : 2.15 X 1.42 X 0.10 mm On wafer measurements Main Characteristics Tamb. = 25° C Symbol Fop G NF Id Parameter Operating frequency range Small signal Gain Noise figure Bias current 95 Min 1 12.5 14 4 dB mA Typ Max 18 Unit GHz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! DSCHA30235263 - 20 sep 05 1/8 Specifications.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA3023-99F WIDE BAND AMPLIFIER
CHA3024-99F 2-22GHz Low Noise Amplifier
CHA3024-FDB Low Noise Amplifier
CHA3024-QGG 2-22GHz Low Noise Amplifier
CHA3063 5.5-23GHz Driver Amplifier
CHA3063-99F Driver Amplifier
CHA3090-98F 81-86GHz Medium Power Amplifier
CHA3091A DC-40GHz ATTENUATOR
CHA3092 20-33GHz Medium Power Amplifier
CHA3092-99F Medium Power Amplifier

CHA3023 Distributor