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CHA3024-FDB Datasheet Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3024-FDB 2-22GHz LNA with AGC GaAs Monolithic Microwave IC in SMD hermetic leadless.

General Description

The CHA3024-FDB is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz.

It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation.

The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 2-22GHz.
  • Typical Linear Gain : 15dB.
  • Up to 30dB adjustable gain with VG2.
  • P1dB=18dBm.
  • PSAT=22dBm.
  • Typical Noise Figure NF=3dB.
  • DC bias : VD=5V@ID=100mA, VG1=-0.3V and VG2=1.7V Main Electrical Characteristics Tamb. = +25°C VD=+5V VG2=1.7V VG1 set to have IDQ=100mA Symbol Parameter Min Typ Max Unit Freq Frequency range 2 22 GHz Gain Linear Gain 15 dB NF Noise Figure 3 dB Pout Output Power @1dB comp. 18 dBm Ref. : DSCHA302.

More Datasheets from United Monolithic Semiconductors

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CHA3024-FDB Distributor