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CHA3801-FAB - L-Band Low Noise Amplifier

General Description

The CHA3801-FAB is an L-Band LNA monolithic circuit including an active bias network.

In addition, a protection network is included to allow high input power survivability.

It is designed for a wide range of applications, from space, military to commercial communication systems.

Key Features

  • L-Band performances: 1-2GHz.
  • 1.5dB Noise Figure.
  • 28dB Linear Gain.
  • 17dBm Saturated Output Power.
  • 27dBm Output Third Order Intercept.
  • DC bias: Vd = 5Volt @ 70mA.
  • 6x6mm² hermetic metal ceramic package.
  • MSL3 ― -40°C . . . +25°C - - - +85°C Typical Noise Figure versus Temperature Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 1 2 GHz.

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Datasheet Details

Part number CHA3801-FAB
Manufacturer United Monolithic Semiconductors
File Size 973.02 KB
Description L-Band Low Noise Amplifier
Datasheet download datasheet CHA3801-FAB Datasheet

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CHA3801-FAB L-Band Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3801-FAB is an L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included to allow high input power survivability. It is designed for a wide range of applications, from space, military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS A3801 YYWW ## SSS Main Features ■ L-Band performances: 1-2GHz ■ 1.