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CHA3801-QDG - L-Band Low Noise Amplifier

Datasheet Summary

Description

The CHA3801-QDG is an L-Band LNA monolithic circuit including an active bias network.

Furthermore a protection network is included in order to allow high input power survivability.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • L-Band performances: 1-2GHz.
  • 1.5dB Noise Figure.
  • 28dB Linear Gain.
  • 17dBm Saturated Power.
  • 27dBm Output Third Order Intercept.
  • DC bias: Vd = 5Volt @ 70mA.
  • 24L-QFN4x4.
  • MSL3 ― -40°C - - - - +25°C ― - +85°C Typical Noise Figure versus Temperature Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 1 2 GHz 28 dB 1.5 dB 15 dBm Ref. :.

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Datasheet Details

Part number CHA3801-QDG
Manufacturer United Monolithic Semiconductors
File Size 688.79 KB
Description L-Band Low Noise Amplifier
Datasheet download datasheet CHA3801-QDG Datasheet
Additional preview pages of the CHA3801-QDG datasheet.

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Full PDF Text Transcription

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CHA3801-QDG RoHS COMPLIANT L-Band Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3801-QDG is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS AA3368680781A YYYYWWWWG Main Features ■ L-Band performances: 1-2GHz ■ 1.
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