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CHA5266-FAB - Medium Power Amplifier

Datasheet Summary

Description

The CHA5266-FAB is a three stage monolithic GaAs medium power amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • Broadband performances: 10-16GHz.
  • 24dB Linear Gain.
  • 26dBm output power @ 1dB comp.
  • 35.5dBm output IP3.
  • DC bias: Vd = 5.0Volt @Idq = 320mA.
  • 6x6mm² hermetic metal ceramic package VG1 VG2 VG3 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P1dB Output power @ 1dB compression OIP3 Output IP3 Min Typ Max Unit 10 16 GHz 24 dB 26 dBm 35.5 dBm Ref. : DSCHA5266-FAB0301 - 27 Oct 20 1/18 Specifications.

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Datasheet Details

Part number CHA5266-FAB
Manufacturer United Monolithic Semiconductors
File Size 1.23 MB
Description Medium Power Amplifier
Datasheet download datasheet CHA5266-FAB Datasheet
Additional preview pages of the CHA5266-FAB datasheet.

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Full PDF Text Transcription

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CHA5266-FAB 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package Description The CHA5266-FAB is a three stage monolithic GaAs medium power amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. RF IN UMS A5266 YYWW ## SSS VD1 VD2 VD3 RF OUT Main Features ■ Broadband performances: 10-16GHz ■ 24dB Linear Gain ■ 26dBm output power @ 1dB comp. ■ 35.5dBm output IP3 ■ DC bias: Vd = 5.
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