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CHA5266-99F Datasheet 10-16 Ghz Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA5266-99F 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3.

It is designed for a wide range of applications, from military to mercial munication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Broadband performances: 10-16GHz.
  • 23dB Linear Gain.
  • 26.5dBm output power @ 1dB comp.
  • 36dBm OIP3.
  • DC bias: Vd=5.0Volt@Id=360mA.
  • Chip size 1.81x1.37x0.1mm. Gain and retun losses (dB) RF IN VD1 VD2 VD3 RF OUT VG1 VG2 VG3 30 25 20 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 O.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA5266-FAB Medium Power Amplifier
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CHA5215A 5.8GHz Medium Power Amplifier
CHA5250-QDG 5.5-9GHz Medium Power Amplifier
CHA5290 17.7-24GHz Medium Power Amplifier
CHA5292A 37-40GHz Medium Power Amplifier
CHA5293A 17-24GHz High Power Amplifier
CHA5295 24.5-26.5GHz High Power Amplifier
CHA5296 27-30GHz High Power Amplifier
CHA5297 37-40GHz High Power Amplifier

CHA5266-99F Distributor