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CHA5266-99F - 10-16 GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • Broadband performances: 10-16GHz.
  • 23dB Linear Gain.
  • 26.5dBm output power @ 1dB comp.
  • 36dBm OIP3.
  • DC bias: Vd=5.0Volt@Id=360mA.
  • Chip size 1.81x1.37x0.1mm. Gain and retun losses (dB) RF IN VD1 VD2 VD3 RF OUT VG1 VG2 VG3 30 25 20 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 O.

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Datasheet Details

Part number CHA5266-99F
Manufacturer United Monolithic Semiconductors
File Size 330.03 KB
Description 10-16 GHz Medium Power Amplifier
Datasheet download datasheet CHA5266-99F Datasheet
Additional preview pages of the CHA5266-99F datasheet.

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Full PDF Text Transcription

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CHA5266-99F 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: 10-16GHz. ■ 23dB Linear Gain. ■ 26.5dBm output power @ 1dB comp. ■ 36dBm OIP3. ■ DC bias: Vd=5.0Volt@Id=360mA. ■ Chip size 1.81x1.37x0.1mm.
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