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CHA5250-QDG - 5.5-9GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA5250-QDG is a three stages monolithic GaAs medium power circuit, close to 1 Watt output power.

It is designed for commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.5µm gate length.

Features

  • Broadband performances: 5.5-9GHz.
  • 26dB Linear Gain.
  • 28dBm output power @1dB comp.
  • 36dBm output TOI.
  • 30% PAE@1dB compression.
  • DC bias: Vd=7Volt@Id=280mA.
  • 24L-QFN4x4 Gain & Return Losses (dB) 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 Gain & RLoss S11 S21 S22 5 10 Frequency (GHz) 15 20 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Min Typ Max Unit.

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Datasheet preview – CHA5250-QDG

Datasheet Details

Part number CHA5250-QDG
Manufacturer United Monolithic Semiconductors
File Size 448.25 KB
Description 5.5-9GHz Medium Power Amplifier
Datasheet download datasheet CHA5250-QDG Datasheet
Additional preview pages of the CHA5250-QDG datasheet.

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Full PDF Text Transcription

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CHA5250-QDG 5.5-9GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5250-QDG is a three stages monolithic GaAs medium power circuit, close to 1 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features ■ Broadband performances: 5.5-9GHz ■ 26dB Linear Gain ■ 28dBm output power @1dB comp. ■ 36dBm output TOI ■ 30% PAE@1dB compression ■ DC bias: Vd=7Volt@Id=280mA ■ 24L-QFN4x4 Gain & Return Losses (dB) 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 Gain & RLoss S11 S21 S22 5 10 Frequency (GHz) 15 20 Main Electrical Characteristics Tamb.
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