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CHA5266-QDG - 10-16 GHz Medium Power Amplifier

Datasheet Summary

Description

The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier.

It is designed for a wide range of applications, from professional to commercial communication systems.

Features

  • Broadband performances: 10-16GHz.
  • 23dB Linear Gain.
  • 25.5dBm output power @ 1dB comp.
  • 35dBm output IP3.
  • DC bias: Vd=5.0Volt@Id=320mA.
  • 24L-QFN4x4.
  • MSL1 Gain & Return Losses (dB) 30 25 20 S21 15 10 S11 5 S22 0 -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Freq (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain 10-12 GHz Linear Gain 12.5-16 GHz OIP3 Output TOI Pout O.

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Datasheet Details

Part number CHA5266-QDG
Manufacturer United Monolithic Semiconductors
File Size 249.15 KB
Description 10-16 GHz Medium Power Amplifier
Datasheet download datasheet CHA5266-QDG Datasheet
Additional preview pages of the CHA5266-QDG datasheet.

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Full PDF Text Transcription

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CHA5266-QDG 10-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMS A5266 YYWW Main Features ■ Broadband performances: 10-16GHz ■ 23dB Linear Gain ■ 25.5dBm output power @ 1dB comp. ■ 35dBm output IP3 ■ DC bias: Vd=5.
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