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CHA6652-QXG - 21 - 27.5GHz Power Amplifier

Datasheet Summary

Description

UMS 2 Watt output power.

A366878A detector.

ESD protections are included.

Features

  • Output power vs frequency 36.
  • Broadband performances: 21- 27.5GHz 34 UMS.
  • 33dBm saturated power 32.
  • 41dBm OIP3 30 28.
  • 20dB gain 26.
  • DC bias: Vd = 6.0Volt @ Id = 1.3A 24.
  • QFN 6x5 22.
  • MSL3 20 18 16 14 Psat P1dB PAE at Psat. 18 19 20 21 22 23 24 25 26 27 28 Frequency (GHz) A3687A Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3.

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Datasheet preview – CHA6652-QXG

Datasheet Details

Part number CHA6652-QXG
Manufacturer United Monolithic Semiconductors
File Size 794.21 KB
Description 21 - 27.5GHz Power Amplifier
Datasheet download datasheet CHA6652-QXG Datasheet
Additional preview pages of the CHA6652-QXG datasheet.

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Full PDF Text Transcription

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AAAYY3U33UU666WWM86MM8686878787SSSWWAAAGG YWWG CHA6652-QXG 21-27.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package UMS A366878A YYWWG UMS A366878A YYWWG Description The CHA6652-QXG is a three stage monolithic GaAs high power circuit producing UMS 2 Watt output power. It is highly linear, with possible gain control and integrates a power A366878A detector. ESD protections are included. YYWWG It is designed for Point To Point Radio. YYWWG AU6M6YY5SAAAYY2UU333WW666MM686868WWSS787878AAAGG YYWWUMS The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD 36 lead 6x5 mm QFN package package.
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