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CHA6653-QXG - Power Amplifier

General Description

The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power.

It is highly linear, with possible gain control and integrates a power detector.

ESD protections are included.

Key Features

  • Broadband performances: 27- 33.5GHz.
  • 32.5dBm saturated power.
  • 38dBm OIP3.
  • 20dB gain.
  • DC bias: Vd = 6.0Volt @ Id = 0.9A.
  • QFN 6x5.
  • MSL3 Output power (dBm) & PAE (%) Output power vs frequency 35 33 31 P1dB P4dB PAE @sat 29 27 25 23 21 19 17 15 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3.

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Datasheet Details

Part number CHA6653-QXG
Manufacturer United Monolithic Semiconductors
File Size 530.24 KB
Description Power Amplifier
Datasheet download datasheet CHA6653-QXG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6653-QXG 27- 33.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. 36 lead 6x5 mm QFN package Main Features ■ Broadband performances: 27- 33.5GHz ■ 32.5dBm saturated power ■ 38dBm OIP3 ■ 20dB gain ■ DC bias: Vd = 6.0Volt @ Id = 0.