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CHA6653-QXG Datasheet Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6653-QXG 27- 33.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

General Description

The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power.

It is highly linear, with possible gain control and integrates a power detector.

ESD protections are included.

Key Features

  • Broadband performances: 27- 33.5GHz.
  • 32.5dBm saturated power.
  • 38dBm OIP3.
  • 20dB gain.
  • DC bias: Vd = 6.0Volt @ Id = 0.9A.
  • QFN 6x5.
  • MSL3 Output power (dBm) & PAE (%) Output power vs frequency 35 33 31 P1dB P4dB PAE @sat 29 27 25 23 21 19 17 15 26 27 28 29 30 31 32 33 34 35 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3.

CHA6653-QXG Distributor