CHZ050A-SEA Datasheet | United Monolithic Semiconductors

50W C Band HPA Ga N HEMT on Si C Description The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band. It is proposed in a low parasitic, low thermal resistance package, and doesn’t require any external matching circuitry. The CHZ050A-SEA is well suited for pulsed radar and sat applications. It is developed on a 0.5µm gate length Ga N HEMT process, and is available as a hermetic flange ceramic metal power package Main Features - Bandwidth : 5.2-5.8 GHz - Pulsed operating mode - High power: > 50W - High Efficiency: up to 45% - DC bias: VDS =50V @ ID_Q =400m A - MTTF > 106 hours @ Tj=200°C - 50 input and output matched - External input/output bias tees required - Ro HS Flange Ceramic package VDS = 50V, ID_Q = 400m A Pulse mode (25µs-10%) Pin = 35d Bm Gain Pout Intrinsic performances of the packaged device Main Electrical Characteristics Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GHz, VDS=50V, ID_Q=400m A Symbol Parameter Min Typ GSS Small Signal Gain 13 15 PSAT PAE Saturated Output Power Max Power Added Efficiency 50 60 40 45 GPAE_MAX Associated Gain at Max...