Datasheet Details
| Part number | CHZ050A-SEA |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 598.26 KB |
| Description | GaN HEMT |
| Datasheet |
 CHZ050A-SEA Datasheet
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General Description
The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in C-band.
Key Features
- Bandwidth : 5.2-5.8 GHz.
- Pulsed operating mode.
- High power: > 50W.
- High Efficiency: up to 45%.
- DC bias: VDS =50V @ ID_Q =400mA.
- MTTF > 106 hours @ Tj=200°C.
- 50 input and output matched.
- External input/output bias tees required.
- RoHS Flange Ceramic package VDS = 50V, ID_Q = 400mA Pulse mode (25µs-10%) Pin = 35dBm PAE Gain Pout Intrinsic performances of the packaged device Main Electrical Characteristics Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GH.